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IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 9, SEPTEMBER
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PDF) Correlation Between Electrical Performance and Gate Width of GaN-based HEMTs
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IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 7
An all-electrical floating-gate transmission line model technique for measuring source resistance in - Electron Devices, IEEE Tr
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High Resolution Fabrication of Josephson Microbridges
The Inverse-Narrow-Width Effect: Ieee Electron Device Letters, Vol. Edl-I, No. JULY 1986 419 | PDF | Mosfet | Field Effect Transistor
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High Performance Monolithically Integrated GaN Driving VMOSFET on LED
Terahertz Detector Utilizing Two-dimensional Electronic Fluid - IEEE Electron Device Letters
PDF) All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology
IEEE Electron Devices Society - Each month, the Editors of the IEEE Electron Device Letters select a small number of particularly remarkable articles as Editors' Picks, one of which is on the
